DataSheetWiki


2N3725 fiches techniques PDF

STMicroelectronics - HIGH VOLTAGE/ HIGH CURRENT SWITCH

Numéro de référence 2N3725
Description HIGH VOLTAGE/ HIGH CURRENT SWITCH
Fabricant STMicroelectronics 
Logo STMicroelectronics 





1 Page

No Preview Available !





2N3725 fiche technique
2N3725
HIGH VOLTAGE, HIGH CURRENT SWITCH
DESCRIPTION
The 2N3725 is a silicon planar epitaxial transistor
in TO-39 metal case It is a high-voltage, high current
switch used for memory applications requiring
breakdown voltages up to 50 V and operating cur-
rents to 1 A. Fast switching times are assured be-
cause of the high minimum fT (300 MHz) and tight
control on storage time.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCES
VCEO
VEBO
IC
Pto t
Tstg, Tj
Parameter
Collector-base Voltage (IE = 0)
Collector-emitter Voltage (V BE = 0)
Collector-emitter Voltage (IB = 0)
Emitter-base Voltage (IC = 0)
Collector Current
Total Power Dissipation at T amb 25 °C
at T c as e 25 °C
Storage and Junction Temperature
January 1989
V al u e
80
80
50
6
1
0.8
3.5
– 65 to 200
Unit
V
V
V
V
A
W
W
°C
1/6

PagesPages 6
Télécharger [ 2N3725 ]


Fiche technique recommandé

No Description détaillée Fabricant
2N3720 Silicon PNP Power Transistors Microsemi Corporation
Microsemi Corporation
2N3720 PNP SIlicon Power Transistor Texas
Texas
2N3720 PNP SILICON TRANSISTOR Seme LAB
Seme LAB
2N3720 Trans GP BJT PNP 60V 3A 3-Pin TO-5 New Jersey Semiconductor
New Jersey Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche