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PDF 2SB139100MA Data sheet ( Hoja de datos )
| Número de pieza | 2SB139100MA | |
| Descripción | LOW IR SCHOTTKY BARRIER DIODE CHIPS | |
| Fabricantes | Silan Microelectronics | |
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2SB139100MA
2SB139100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB139100MA is a schottky barrier diode chips
fabricated in silicon epitaxial planar technology;
Ø Due to special schottky barrier structure, the chips
have very low reverse leakage current ( typical
IR=0.002mA@ Vr=100V ) and maximum 150°C
operation junction temperature;
Ø Low power losses, high efficiency;
Ø Guard ring construction for transient protection;
Ø High ESD capability;
Ø High surge capability;
Ø Packaged products are widely used in switching
power suppliers, polarity protection circuits and
Chip Topography and Dimensions
La: Chip Size: 1.390mm;
Lb: Pad Size: 1.295mm;
ORDERING SPECIFICATIONS
other electronic circuits;
Ø Chip Size: 1390µm X 1390µm;
Ø Chip Thickness: 280±20µm;
Product Name
2SB139100MAYY
Specification
For Axial leads package
ABSOLUTE MAXIMUM RATINGS
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge [email protected]
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
VRRM
IFAV
IFSM
TJ
TSTG
Ratings
100
3
80
150
-40~150
Unit
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25 )
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Symbol
VBR
VF
IR
Test Conditions
IR=0.5mA
IF=3A
VR=100V
Min.
100
--
--
Max.
--
0.85
0.5
Unit
V
V
mA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2007.04.27
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