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NXP Semiconductors - NPN/NPN low VCEsat (BISS) transistor

Numéro de référence PBSS4230PAN
Description NPN/NPN low VCEsat (BISS) transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBSS4230PAN fiche technique
PBSS4230PAN
30 V, 2 A NPN/NPN low VCEsat (BISS) transistor
14 December 2012
Product data sheet
1. General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4230PANP. PNP/PNP complement: PBSS5230PAP.
2. Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
High efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
Load switch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter
voltage
IC collector current
ICM peak collector current
Per transistor
RCEsat
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ≤ 1 ms
IC = 1 A; IB = 0.1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - 30 V
- - 2A
- - 3A
- - 145 mΩ
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