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NXP Semiconductors - NPN/NPN low VCEsat (BISS) transistor

Numéro de référence PBSS4112PAN
Description NPN/NPN low VCEsat (BISS) transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBSS4112PAN fiche technique
PBSS4112PAN
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
29 November 2012
Product data sheet
1. Product profile
1.1 General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP.
1.2 Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
High energy efficiency due to less heat generation
AEC-Q101 qualified
1.3 Applications
Load switch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter
voltage
IC collector current
ICM peak collector current
Per transistor
RCEsat
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ≤ 1 ms
IC = 500 mA; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - 120 V
- - 1A
- - 1.5 A
- - 240 mΩ
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