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PDF 2SC945-Y Data sheet ( Hoja de datos )
| Número de pieza | 2SC945-Y | |
| Descripción | NPN Silicon Plastic-Encapsulate Transistor | |
| Fabricantes | MCC | |
| Logotipo |  |
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MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
Features
• Capable of 0.4Watts of Power Dissipation.
• Collector-current 0.15A
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55OC to +150OC
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
ICER
IEBO
Collector-Emitter Breakdown Voltage
(I C=0.1mAdc, IB=0)
Collector-Base Breakdown Voltage
(I C=1000uAdc, IE=0)
Emitter-Base Breakdown Voltage
(I E=100uAdc, IC=0)
Collector Cutoff Current
(V CB=60Vdc, IE=0Adc)
Collector Cutoff Current
(V CE=55Vdc,R=10M OHM)
Emitter Cutoff Current
(V EB=5.0Vdc, IC=0Adc)
ON CHARACTERISTICS
50 Vdc
60 Vdc
5.0 Vdc
0.1 uAdc
0.1 uAdc
0.1 uAdc
h FE(1)
h FE(2)
V CE(sat)
V BE(sat)
VBE
DC Current Gain
(IC=1.0mAdc, VCE=6.0Vdc)
DC Current Gain
(I C=0.1mAdc, VCE=6.0Vdc)
Collector-Emitter Saturation Voltage
(I C=100mAdc, IB=10mAdc)
Base-Emitter Saturation Voltage
(I C=100mAdc, IB=10mAdc)
Base-Emitter Voltage
(I E=310mAdc)
SMALL-SIGNAL CHARACTERISTICS
120 400
40
0.3 Vdc
1.0 Vdc
1.4 Vdc
f T Transistor Frequency
(IC=10mAdc, VCE=6.0Vdc, f=30MHz)
150
MHz
CLASSIFICATION OF HFE (1)
Rank
Y
Range
120-240
GR
200-400
2SC945-Y
2SC945-GR
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
B
C
D
G ECB
DIMENSIONS
INCHES
MM
DIM MIN
MAX MIN MAX NOTE
A .170 .190 4.33 4.83
B .170 .190 4.30 4.83
C .550 .590 13.97 14.97
D .010 .020 0.36 0.56
E .130 .160 3.30 3.96
G .096 .104 2.44 2.64
Revision: A
www.mccsemi.com
1 of 2
2011/01/01
Free Datasheet http://www.datasheet4u.com/
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| Páginas | Total 2 Páginas | |
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