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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SC945
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of AF amplifier
applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
5
Collector Current
IC 100
Base Current
IB 50
Total Power Dissipation
PD 250
Junction Temperature
TJ +150
Storage Temperature
TSTG -55 to +150
Unit
V
V
V
mA
mA
mW
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) Min
2o Typ
2o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO 60
-
Collector-Emitter Breakdown Voltage BVCEO 50
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
Collector Cutoff Current
ICBO
-
-
Emitter Cutoff Current
IEBO
Collector-Emitter Saturation Voltage(1) VCE(sat)
-
-
-
0.1
DC Current Gain(1)
hFE1
hFE2
50
135
-
-
Transition Frequency
fT 150
-
Output Capacitance
Cob -
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max
-
-
-
0.1
0.1
0.3
-
600
600
4
Unit
V
V
V
µA
µA
V
-
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=60V, IE=0
VEB=5V, IB=0
IC=100mA, IB=10mA
IC=0.1mA, VCE=6V
IC=1mA, VCE=6V
IC=10mA, VCE=6V, f=100MHz
VCB=10V, f=1MHz, IE=0
Classification of hFE2
Rank
Q
P
Range
135~270
200~400
K
300~600