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SeCoS - NPN Type Plastic Encapsulate Transistors

Numéro de référence 2SC1815K
Description NPN Type Plastic Encapsulate Transistors
Fabricant SeCoS 
Logo SeCoS 





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2SC1815K fiche technique
2SC1815K
Elektronische Bauelemente
NPN Type
Plastic Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
ƔFEATURES
. Power Dissipation
PCM: 0.2 W ( Ta = 25 к )
. Collector Current
ICM: 0.15 A
. Collector-Base Voltage
V(BR)CBO: 60 V
3
1
2
1.BASE
2.EMITTER
3.COLLECTOR
A
L
3
Top View
12
VG
BS
C
DH
K
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
J
ƔABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25к)
TYPE NUMBER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Operating and Storage Junction
Temperature Range
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE (sat)
VBE(sat)
fT
TJ, TSTG
TEST CONDITIONS
IC = 100 µA, IE = 0 A
IC = 0.1 mA, IB = 0 A
IE = 100 µA, IC = 0 A
VCB = 60 V, IE = 0 A
VCE = 50 V, IB = 0 A
VEB = 5 V, IC = 0 A
VCE = 6 V, IC = 2 mA
IC = 100 mA, IB = 10 mA
IC = 100 mA, IB = 10 mA
VCE = 10 V, IC = 1 mA,
f = 30 MHz
-
Min.
60
50
5
-
-
-
130
-
-
80
Typ.
-
-
-
-
-
-
-
-
-
-
- 55 ~ +150
Max.
-
-
-
0.1
0.1
0.1
400
0.25
1
-
UNIT
V
V
V
µA
µA
µA
V
V
MHz
к
ƔhFE VALUES ARE CLASSIFIED AS FOLLOWS:
Rank
L
H
hFE
130 ~ 200
200 ~ 400
Marking: HF
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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