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Numéro de référence | 2SB1308 | ||
Description | Power Transistor | ||
Fabricant | Kexin | ||
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1 Page
SMD Type
Power Transistor
2SB1308
Features
Low saturation voltage, typically
VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A.
Excellent DC current gain characteristics.
Transistors
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(Pulse)
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw=10ms
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
VCBO
VCEO
VEBO
IC
ICP *
PC
Tj
Tstg
Rating
-30
-20
-6
-3
-5
0.5
150
-55 to +150
Unit
V
V
V
A
A
W
Symbol
Testconditons
BVCBO IC=-50ìA
BVCEO IC=-1mA
BVEBO IE=-50ìA
ICBO VCB=-20V
IEBO VEB=-5V
hFE VCE=-2V, IC=-0.5A
VCE(sat) IC=-1.5A,IB=-0.15A
Cob VCE=-6V, IE=50mA, f=100MHz
fT VCB=-20V, IE=0A, f=1MHz
hFE Classification
Marking
Rank
hFE
P
82 180
BF
Q
120 270
R
180 390
Min Typ Max Unit
-30 V
-20 V
-6 V
-0.5 ìA
-0.5 ìA
82 390
-0.45 V
120 MHz
60 pF
www.kexin.com.cn 1
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 1 | ||
Télécharger | [ 2SB1308 ] |
No | Description détaillée | Fabricant |
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