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PDF 2SB1198K Data sheet ( Hoja de datos )
| Número de pieza | 2SB1198K | |
| Descripción | PNP Silicon General Purpose Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2SB1198K
PNP Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
L
FEATURES
3
S Top View
21
B
Power dissipation
PCM : 0.2
Collector current
W
* ICM : -0.5
Collector-base voltage
A
V(BR)CBO : -80
V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
H
D
G
C
K
3
2
1
COLLECTOR
3
2
BASE
J
SC-59
Dim Min Max
A 2.70 3.10
B 1.30 1.70
C 1.00 1.30
D 0.35 0.50
G 1.70 2.30
H 0.00 0.10
J 0.10 0.26
K 0.20 0.60
L 1.25 1.65
S 2.25 3.00
All Dimension in mm
1
EMITTER
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
Collector-base breakdown voltage
V(BR)CBO Ic=-50 A,IE=0
-80
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V(BR)CEO Ic=-2mA,IB=0
V(BR)EBO IE=-50 A,IC=0
ICBO VCB=-50V,IE=0
IEBO VEB=-4V,IC=0
hFE(1) VCE=-3V,IC=-100mA
VCE(sat) IC=-500mA,IB=-50mA
fT VCE=-10V,IC=-50mA
Cob VCB=-10V,IE=0,f=1MHz
-80
-5
120
180
11
MAX
-0.5
-0.5
390
-0.5
UNIT
V
V
V
A
A
V
MHz
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Q
120-270
R
180-390
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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