|
|
PDF 2SB1197KRLT1 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1197KRLT1 | |
| Descripción | Low Frequency Transistor | |
| Fabricantes | WILLAS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SB1197KRLT1 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
WILLAS
2SB1197KxLFTMT11H2R0U-M+
Low Frequency Transistor
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
PNP Silicon• Low profile surface mounted application in order to
optimize board space.
SOD-123H
• Low power loss, high efficiency.
• HFigEhAcTuUrrRenEt capability, low forward voltage drop.
• HigƽhHsiguhrgceurcraenptacbailpitayc.ity in compact package.
• GuarICdr=iníg0f.8oAr .overvoltage protection.
• UltƽraEhpiitgahx-iaslppelaendasrwtyiptceh. ing.
•
•
LSeilƽaicdNo-nPfrNeeepcioptamaxrpitalselmmpeleanentt:a2erSncDvhi1ripo7,8nm1mKeetnatlaslislitcaonndjaurndcstioofn.
MIƽL-WSTeDd-e1c9la5r0e0th/2a2t 8the material of product compliance with RoHS requirements.
• RoHSPpbr-oFdruectefopr apcackkainggecoisdeasvuaffiixla"Gb"le
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT– 23
HalogReonHfrSeepprrodduucct tfofroprapckaicngkicnogdecsoudffeixs"Hu"ffix ”G”
MecHhaalongiecnafrlede aprtoaduct for packing code suffix “H”
• Epoxy : UL94-V0 rated flame retardant
D• ECVaIsCeE: MMoAldReKdIpNlaGstAicN, DSOODR-1D2E3RHING INFORMATION
•
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
Device Method 2026
Marking
Shipping
0.031(0.8) Typ.
1
BASE
0.040(1.0)
3 0.024(0.6)
COLLECTOR
0.031(0.8) Typ.
• Pol2aSrBity11:9I7nKdQicLaTte1d by cathode baAnHdQ
• Mo2uSnBtin11g9P7oKsRitLiTo1n : Any
AHR
• Weight : Approximated 0.011 gram
3000/Tape&Reel
3000/Tape&Reel
Dimensions in inches and (millim2eters)
EMITTER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RatingMs aAtX2I5M℃UMamRAbiTeInNtGteSm(Tpae=ra2t5uqrCe )unless otherwise specified.
Single phase half wPaavera,m60etHezr , resistive of indSuycmtibvoel load. Limits
Unit
For capacitCivoellelocatodr,-bdaesreatveocltuargrent by 20% VCBO
−40
V
Collector-emRiAtteTrINvoGltSage
VCEO SYMBOL FM−31220-MH FM130-MHVFM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking CodEemitter-base voltage
VEBO
−512 13 V 14 15 16 18 10 115 120
Maximum RCecoullrerecntotrPceuarkreRnet verse Voltage
IC VRRM −02.80
30 A 40
Maximum RCMoSllVecotlotargpeower dissipation
PC VRMS
0.124
21 W 28
Maximum DJCuBnclotcioknintgemVopletargaeture
Tj VDC
15200
30 °C 40
Maximum AvSetorargaegeFoterwmapredraRteucretified Current
Tstg IO −55 to 150
°C
Peak FoErwLaErdCSTuRrgIeCCAuLrreCnHt 8A.3RmAsCsTinEglRe IhSaTlf IsCinSe-(wTaav=e25qCIF)SM
superimposed on rated load (JEDEC method)
Parameter
Symbol Min.
Typical Thermal Resistance (Note 2)
Typical JuncCtioonlleCcatopra-bciatasnecber(eNaoktdeo1w)n voltage
RΘJA
BVCBOCJ −40
Typ.
−
M ax.
−
Unit
V
Operating TeCmoplleecratotur-reemRiattnegrebreakdown voltage BVCEOTJ −32
− -55 to−+125 V
50 60
80 100
35 42
56 70
50 60
80 100
1.0
30
Conditions
40
IC= −50µA
120
IC= −1mA
-55 to +150
150
105
150
200
140
200
V
V
V
A
A
℃
P
Storage TemEpmeritateturr-ebaRsaenbgreeakdown voltage
BVETBOSTG −5
−
−
V IE= −50µA - 65 to +175
Collector cutoff current
ICBO
−
− −0.5 µA VCB= −20V
Emitter CcuHtAofRf AcuCrTreEnRtISTICS
IEBSOYMBOL−FM120-M−H FM1−300.-5MH FMµ14A0-MH VFMEB1=50−-4MVH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9 0.92 V
Collector-emitter saturation voltage VCE(sat) −
Maximum Average Reverse Current at
Rated DC BlDocCkicnugrrVeonlttatgraensfer ratio
@T A=25℃
@T A=125℃
hFE
IR
120
− −0.5
− 390
V IC/IB= −0.5A/ −50mA
0.5
− VCE= −3V, IC= −11000mA
m
Transition frequency
fT − 200 − MHz VCE= −5V, IE=50mA, f=100MHz
NOTES: Output capacitance
Cob
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
−
12 30 pF VCB= −10V, IE=0A, f=1MHz
2- Thermal Resistance From Junction to Ambient
hFE values are classified as follows :
Item(*)
Q
R
hFE 120~270 180~390
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1197KRLT1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SB1197KRLT1 | Low Frequency Transistor | WILLAS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |