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WILLAS - Low Frequency Transistor

Numéro de référence 2SB1197KxLT1
Description Low Frequency Transistor
Fabricant WILLAS 
Logo WILLAS 





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2SB1197KxLT1 fiche technique
WILLAS
2SB1197KxLFTMT11H2R0U-M+
Low Frequency Transistor
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
PNP SiliconLow profile surface mounted application in order to
optimize board space.
SOD-123H
Low power loss, high efficiency.
HFigEhAcTuUrrRenEt capability, low forward voltage drop.
HigƽhHsiguhrgceurcraenptacbailpitayc.ity in compact package.
GuarICdr=iníg0f.8oAr .overvoltage protection.
UltƽraEhpiitgahx-iaslppelaendasrwtyiptceh. ing.
LSeilƽaicdNo-nPfrNeeepcioptamaxrpitalselmmpeleanentt:a2erSncDvhi1ripo7,8nm1mKeetnatlaslislitcaonndjaurndcstioofn.
MIƽL-WSTeDd-e1c9la5r0e0th/2a2t 8the material of product compliance with RoHS requirements.
RoHSPpbr-oFdruectefopr apcackkainggecoisdeasvuaffiixla"Gb"le
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT– 23
HalogReonHfrSeepprrodduucct tfofroprapckaicngkicnogdecsoudffeixs"Hu"ffix ”G”
MecHhaalongiecnafrlede aprtoaduct for packing code suffix “H”
Epoxy : UL94-V0 rated flame retardant
DECVaIsCeE: MMoAldReKdIpNlaGstAicN, DSOODR-1D2E3RHING INFORMATION
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
Device Method 2026
Marking
Shipping
0.031(0.8) Typ.
1
BASE
0.040(1.0)
3 0.024(0.6)
COLLECTOR
0.031(0.8) Typ.
Pol2aSrBity11:9I7nKdQicLaTte1d by cathode baAnHdQ
Mo2uSnBtin11g9P7oKsRitLiTo1n : Any
AHR
Weight : Approximated 0.011 gram
3000/Tape&Reel
3000/Tape&Reel
Dimensions in inches and (millim2eters)
EMITTER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RatingMs aAtX2I5MUMamRAbiTeInNtGteSm(Tpae=ra2t5uqrCe )unless otherwise specified.
Single phase half wPaavera,m60etHezr , resistive of indSuycmtibvoel load. Limits
Unit
  For capacitCivoellelocatodr,-bdaesreatveocltuargrent by 20% VCBO
40
V
Collector-emRiAtteTrINvoGltSage
VCEO SYMBOL FM31220-MH FM130-MHVFM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking CodEemitter-base voltage
VEBO
512 13 V 14 15 16 18 10 115 120
Maximum RCecoullrerecntotrPceuarkreRnet verse Voltage
IC VRRM 02.80
30 A 40
Maximum RCMoSllVecotlotargpeower dissipation
PC VRMS
0.124
21 W 28
Maximum DJCuBnclotcioknintgemVopletargaeture
Tj VDC
15200
30 °C 40
Maximum AvSetorargaegeFoterwmapredraRteucretified Current
 
Tstg IO 55 to 150
 
°C
Peak FoErwLaErdCSTuRrgIeCCAuLrreCnHt 8A.3RmAsCsTinEglRe IhSaTlf IsCinSe-(wTaav=e25qCIF)SM
superimposed on rated load (JEDEC method)
Parameter
Symbol Min.
Typical Thermal Resistance (Note 2)
Typical JuncCtioonlleCcatopra-bciatasnecber(eNaoktdeo1w)n voltage
RΘJA
BVCBOCJ 40
Typ.
M  ax.
 
Unit
V
Operating TeCmoplleecratotur-reemRiattnegrebreakdown voltage BVCEOTJ 32
-55 to+125 V
50 60
80 100
35 42
56 70
50 60
80 100
1.0
 
30
Conditions
40
IC= −50µA
120
IC= −1mA  
 
 
-55 to +150
150
105
150
200
140
200
 
V
V
V
A
A
P
Storage TemEpmeritateturr-ebaRsaenbgreeakdown voltage
BVETBOSTG 5
V IE= −50µA - 65 to +175
  Collector cutoff current
ICBO
− −0.5 µA VCB= −20V
Emitter CcuHtAofRf AcuCrTreEnRtISTICS
IEBSOYMBOLFM120-MH FM1300.-5MH FMµ14A0-MH VFMEB1=50-4MVH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9 0.92 V
Collector-emitter saturation voltage VCE(sat)
Maximum Average Reverse Current at
Rated DC BlDocCkicnugrrVeonlttatgraensfer ratio
@T A=25℃
@T A=125℃
hFE
IR
120
− −0.5
390
V IC/IB= −0.5A/ 50mA
0.5
VCE= −3V, IC= −11000mA
 
m
  Transition frequency
fT 200 MHz VCE= −5V, IE=50mA, f=100MHz
NOTES: Output capacitance
Cob
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
12 30 pF VCB= −10V, IE=0A, f=1MHz
2- Thermal Resistance From Junction to Ambient
 
  hFE values are classified as follows :
Item(*)
Q
R
hFE 120~270 180~390
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
Free Datasheet http://www.datasheet4u.com/

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