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PDF 2SB1197K Data sheet ( Hoja de datos )
| Número de pieza | 2SB1197K | |
| Descripción | Low Frequency Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Low Frequency Transistor
2SB1197K
Transistors
Features
Low VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA .
IC = -0.8A.
PNP silicon transistor
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base Voltage
Collector-emitter Voltage
Emitter-base Voltage
Collector current
Collector power dissipation
Jumction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
-40
-32
-5
-0.8
0.2
150
-55 to +150
Unit
V
V
V
A
W
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltae
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-Emitter Saturation Voltage
DC current transfer ratio
Output Capacitance
Transition frequency
hFE Classification
Marking
Rank
hFE
AHQ
Q
120 270
AHR
R
180 390
Symbol
Testconditons
VCBO IC = -50 A
VCEO IC = -1mA
VEBO IE = -50 A
ICBO VCB = -20V
IEBO VEB = -4V
VCE(sat) IC = -0.5A , IB = -50mA
hFE VCE = -3V , IC = -100mA
Cob VCB = -10V , IE = 0A , f = 1MHz
fT VCE = -5V , IE = 50mA , f = 100MHz
Min Typ Max Unit
-40 V
-32 V
-5 V
-0.5 A
-0.5 A
-0.5 V
120 390
12 30 pF
200 MHz
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