|
|
Numéro de référence | 2SB1197K | ||
Description | Plastic-Encapsulated Transistors | ||
Fabricant | TRANSYS | ||
Logo | |||
1 Page
Transys
Electronics
LIMITED
SOT-23-3L Plastic-Encapsulated Transistors
2SB1197K TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM:
200 mW (Tamb=25℃)
Collector current
ICM: -800 mA
Collector-base voltage
V(BR)CBO: -40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Ic=-50µA, IE=0
Ic=-1mA, IB=0
IE=-50µA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
VCE=-3V, IC=-100mA
IC=-0.5A, IB=-50mA
VCE=-5V, IC=-50mA
f=100MHz
VCE=-10V, IC=0
f=1MHz
-40
-32
-5
82
50 200
12
MAX
-0.5
-0.5
390
-0.5
UNIT
V
V
V
µA
µA
V
MHz
30 pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
P
82-180
AHP
Q
120-270
AHQ
R
180-390
AHR
Free Datasheet http://www.datasheet4u.com/
|
|||
Pages | Pages 1 | ||
Télécharger | [ 2SB1197K ] |
No | Description détaillée | Fabricant |
2SB1197 | PNP General Purpose Transistors | WEITRON |
2SB1197 | Silicon Epitaxial Planar Transistor | Galaxy Microelectronics |
2SB1197 | (2SB1197-xx) PNP Silicon Epitaxial Transistors | MCC |
2SB1197 | Silicon Epitaxial Planar Transistor | Galaxy Semi-Conductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |