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PDF 2SB1197 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1197 | |
| Descripción | PNP Epitaxial Planar Transistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
2SB1197
-0.8 A, -40 V
PNP Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Low VCE(sat).VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA)
IC =-0.8A
Complements of the 2SD1781
CLASSIFICATION OF hFE
Product-Rank 2SB1197-P
Range
82~180
Marking
AHP
2SB1197-Q
120~270
AHQ
2SB1197-R
180~390
AHR
SOT-23
A
L
3
Top View
CB
12
KE
1
3
2
D
F GH J
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Power Dissipation
VCBO
VCEO
VEBO
IC
Pc
-40
-32
-5
-800
200
Junction & Storage Temperature
TJ, TSTG
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ. Max. Unit
Collector-base breakdown voltage
BVCBO
-40
-
-
V
Collector-emitter breakdown voltage
BVCEO
-32
-
-
V
Emitter-base breakdown voltage
BVEBO
-5
- -V
Collector cut-off current
ICBO - - -0.5 μA
Emitter cut-off current
IEBO - - -0.5 μA
Collector-emitter saturation voltage
VCE(sat)
-
- -0.5 V
DC current gain
hFE 82 - 390
Transition frequency
fT 50 200 - MHz
Collector output capacitance
COB - 12 30 pF
Test Conditions
IC=-50μA, IE = 0
IC=-1mA, IB = 0
IE=-50μA, IC = 0
VCB=-20V, IE = 0
VEB= -4V, IC = 0
IC=-500mA, IB=-50mA
VCE=-3V, IC=-100mA
VCE=-5V, IC=-50mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
31-Dec-2010 Rev. C
Any changes of specification will not be informed individually.
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