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Número de pieza | 2SB1193 | |
Descripción | Silicon PNP Epitaxial Transistor | |
Fabricantes | Panasonic | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SB1193 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Power Transistors
2SB1193
Silicon PNP epitaxial planar type darlington
For midium-speed power switching
Complementary to 2SD1773
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
■ Features
• High forward current transfer ratio hFE
• High-speed switching
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−120
−120
−7
−8
−12
50
2
150
−55 ∼ +150
Unit
V
V
V
A
A
W
°C
°C
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
123
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
C
B
■ Electrical Characteristics TC = 25°C ± 3°C
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter sustaining voltage *
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO(SUS)
VEBO
ICBO
ICEO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
ton
tstg
tf
IC = −2 A, L = 10 mH
IE = −50 mA, IC = 0
VCB = −120 V, IE = 0
VCE = −100 V, IB = 0
VCE = −3 V, IC = −4 A
IC = −4 A, IB = −8 mA
IC = −8 A, IB = −80 mA
IC = −4 A, IB = −8 mA
IC = −8 A, IB = −80 mA
VCE = −10 V, IC = − 0.5 A, f = 1 MHz
IC = −4 A, IB1 = −8 mA, IB2 = 8 mA
VCC = −50 V
−120
−7
1 000
V
V
−100 µA
−10 µA
20 000
−1.5 V
−3.0
−2.0 V
−3.5
15 MHz
0.7 µs
3.5 µs
2.0 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: VCEO(SUS) test circuit 50 Hz/60 Hz
mercury relay
X
L
120 Ω
6V
Y
1Ω
15 V
G
Publication date: February 2003
SJD00059AED
1
Free Datasheet http://www.datasheet4u.com/
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2SB1193.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SB1190 | SILICON POWER TRANSISTOR | SavantIC |
2SB1192 | SILICON POWER TRANSISTOR | SavantIC |
2SB1193 | SILICON POWER TRANSISTOR | SavantIC |
2SB1193 | Silicon PNP Epitaxial Transistor | Panasonic |
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