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TGF2023-2-20 fiches techniques PDF

TriQuint - 90 Watt Discrete Power GaN on SiC HEMT

Numéro de référence TGF2023-2-20
Description 90 Watt Discrete Power GaN on SiC HEMT
Fabricant TriQuint 
Logo TriQuint 





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TGF2023-2-20 fiche technique
Applications
Defense & Aerospace
Broadband Wireless
TGF2023-2-20
90 Watt Discrete Power GaN on SiC HEMT
Product Features
Frequency Range: DC - 18 GHz
50.5 dBm Nominal PSAT at 3 GHz
70.5% Maximum PAE
19.2 dB Nominal Power Gain at 3 GHz
Bias: VD = 12 - 32 V, IDQ = 400 - 2000 mA
Technology: TQGaN25 on SiC
Chip Dimensions: 0.82 x 4.56 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2023-2-20 is a discrete 20 mm GaN
on SiC HEMT which operates from DC-18 GHz. The
TGF2023-2-20 is designed using TriQuint’s proven
TQGaN25 production process. This process features
advanced field plate techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
Pad Configuration
Pad No.
1-16
17
Backside
Symbol
VG / RF IN
VD / RF OUT
Source / Ground
The TGF2023-2-20 typically provides 50.5 dBm of
saturated output power with power gain of 19.2 dB at
3 GHz. The maximum power added efficiency is
70.5 % which makes the TGF2023-2-20 appropriate for
high efficiency applications.
Lead-free and RoHS compliant
Ordering Information
Part
ECCN Description
TGF2023-2-20 3A001b.3.b 90 Watt GaN HEMT
Datasheet: Rev C 09-27-13
© 2013 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com
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