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What is 2SB1188?

This electronic component, produced by the manufacturer "WILLAS", performs the same function as "Plastic-Encapsulate Transistors".


2SB1188 Datasheet PDF - WILLAS

Part Number 2SB1188
Description Plastic-Encapsulate Transistors
Manufacturers WILLAS 
Logo WILLAS Logo 


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SOT-89 Plastic-Encapsulate Transistors
2SB1188
TRANSISTOR (PNP)
FEATURES
z Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A)
z Complements the 2SD1766
z Weight: 0.05 g
z RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
-40 V
-32 V
-5 V
-2 A
SOT-89
1. BASE
2. COLLECTOR1
2
3. EMITTER
3
PC Collector Power Dissipation
TJ Junction Temperature
Tstg Storage Temperature
0.5 (2.0*)
150
-55-150
W
* When mounted on a 40*40*1mm ceramic board.
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO IC=-50μA , IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO =IC= -1mA , IB 0
-32
V
Emitter-base breakdown voltage
V(BR)EBO IE=-50μA, IC=0
-5
V
Collector cut-off current
ICBO =VCB=-20 V , IE 0
-1 μA
Emitter cut-off current
IEBO =VEB=-4 V , IC 0
-1 μA
DC current gain *
hFE VCE= -3V, IC= -0.5A
82 390
Collector-emitter saturation voltage *
VCE(sat)
Transition frequency
fT
Output capacitance
* Measured using pulse current.
CLASSIFICATION OF hFE
Rank
Range
P
82-180
Marking
BCP
P/N 2SB1188P
Cob
IC=-2A, IB= -0.2A
VCE=-5V, IC=-0.5A ,f=30MHz
VCB=-10V, IE=0 ,f=1MHz
Q
120-270
BCQ
2SB1188Q
-0.8 V
100 MHz
50 pF
R
180-390
BCR
2SB1188
2012-0
WILLAS ELECTRONIC CORP.
Free Datasheet http://www.datasheet4u.com/


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SB1188 electronic component.


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