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PDF 2SB1180 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1180 | |
| Descripción | Silicon PNP Epitaxial Planar Type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Power Transistors
2SB1180, 2SB1180A
Silicon PNP epitaxial planar type darlington
For medium-speed voltage switching
Complementary to 2SD1750, 2SD1750A
7.0±0.3
3.0±0.2
2.0±0.2
Unit: mm
3.5±0.2
0˚ to 0.15˚
■ Features
• High forward current transfer ratio hFE
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SB1180 VCBO
2SB1180A
−60
−80
Unit
V
1.1±0.1
0.75±0.1 0.4±0.1
2.3±0.2
4.6±0.4
123
0.9±0.1
0˚ to 0.15˚
Collector-emitter voltage 2SB1180
(Base open)
2SB1180A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−60
−80
−7
−8
−12
15
1.3
150
−55 to +150
V
V
A
A
W
°C
°C
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
B
C
■ Electrical Characteristics TC = 25°C ± 3°C
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SB1180 VCEO
2SB1180A
IC = −30 mA, IB = 0
−60
−80
V
Collector-base cutoff
current (Emitter open)
2SB1180
2SB1180A
ICBO
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
IEBO
hFE1 *
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = −60 V, IE = 0
VCB = −80 V, IE = 0
VEB = −7 V, IC = 0
VCE = −3 V, IC = −4 A
VCE = −3 V, IC = −8 A
IC = −4 A, IB = −8 mA
IC = −4 A, IB = −8 mA
VCE = −3 V, IC = −1 A, f = 1 MHz
IC = −4 A, IB1 = −8 mA, IB2 = 8 mA
VCC = −50 V
2 000
500
−100
−100
−2
10 000
µA
mA
−1.5 V
−2 V
20 MHz
0.5 µs
2.0 µs
1.0 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1 2 000 to 5 000 4 000 to 10 000
Publication date: March 2003
SJD00056AED
1
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SB1180.PDF ] | |
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