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PDF 2SB1169 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1169 | |
| Descripción | Power Transistors | |
| Fabricantes | Panasonic | |
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Power Transistors
2SB1169, 2SB1169A
Silicon PNP epitaxial planar type
For power amplification
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity
• Low collector-emitter saturation voltage VCE(sat)
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
7.0±0.3
3.0±0.2
2.0±0.2
Unit : mm
3.5±0.2
0˚ to 0.15˚
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SB1169 VCBO
2SB1169A
−60
−80
Collector-emitter voltage 2SB1169 VCEO
(Base open)
2SB1169A
−60
−80
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
−5
−1
−2
15
1.3
150
−55 ∼ +150
Unit
V
V
V
A
A
W
°C
°C
1.1±0.1
0.75±0.1 0.4±0.1
2.3±0.2
4.6±0.4
123
0.9±0.1
0˚ to 0.15˚
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SB1169 VCEO
2SB1169A
IC = −30 mA, IB = 0
−60
−80
V
Base-emitter voltage
Collector-emitter cutoff
current (E-B short)
2SB1169
2SB1169A
VBE
ICES
Collector-emitter cutoff
current (Base open)
2SB1169
2SB1169A
ICEO
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Strage time
Fall time
IEBO
hFE1 *
hFE2
VCE(sat)
fT
ton
tstg
tf
VCE = −4 V, IC = −1 A
VCE = −60 V, VBE = 0
VCE = −80 V, VBE = 0
VCE = −30 V, IB = 0
VCE = −60 V, IB = 0
VEB = −5 V, IC = 0
VCE = −4 V, IC = − 0.2 A
VCE = −4 V, IC = −1 A
IC = −1 A, IB = − 0.125 A
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
IC = −1 A, IB1 = −50 mA, IB2 = 50 mA
VCC = −50 V
40
15
−1.3
−200
−200
−300
−300
−1
450
V
µA
µA
mA
−1 V
40 MHz
0.5 µs
1.2 µs
0.3 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
O
hFE1
40 to 90
70 to 150
120 to 250 200 to 450
Publication date: April 2003
SJD00045AED
1
Free Datasheet http://www.datasheet4u.com/
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1169.PDF ] | |
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