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Numéro de référence | 2SB1132-Q | ||
Description | PNP Plastic-Encapsulate Transistors | ||
Fabricant | MCC | ||
Logo | |||
1 Page
MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Power dissipation: PCM = 0.5W(Tamb=25ć)
• Collector current: ICM = -1A
• Collector-base voltage: V(BR)CBO = -40V
• Operating and storage junction temperature range
TJ, Tstg: -55ć to + 150ć
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol
VCEO
VCBO
VEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Parameter
Collector-Emitter Voltage
(IC=-50A, IE=0)
Collector-Base Voltage
(IC=-1A, IB=0)
Emitter-Base Voltage
(IE=-50A, IC=0)
Collector cut-off Current
(VCB=-20V, IE=0)
Emitter cut-off Current
(VEB=-5V, IC=0)
DC current gain
(VCE=-2V, IC=-0.1A)
Collector-Emitter Saturation Voltage
(IC=-2A, IB=-0.1A)
Transition Frequency
(VCE=2.0Vdc, IC=0.5Adc)
Collector output capacitance
(VCB=-10V, IE=0, f=1MHz)
Min Typ Max Unit
-32 --- ---
V
-40 --- ---
V
-5.0 --- ---
V
--- --- -0.5 A
--- --- -0.5 A
82 --- 390 ---
--- --- -0.5 V
--- 150 --- MHz
--- 20 30
CLASSIFICATION OF hFE
Rank
P
Range
82-180
Marking
BAP
Q
120-270
BAQ
R
180-390
BAR
2SB1132-P
2SB1132-Q
2SB1132-R
PNP
Plastic-Encapsulate
Transistors
SOT-89
A
B
K
E
C
D
G
H
F
J
123
1.BASE
2.COLLECTOR
3.EMITTER
25
Revision: A
www.mccsemi.com
1 of 2
2011/01/01
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 2 | ||
Télécharger | [ 2SB1132-Q ] |
No | Description détaillée | Fabricant |
2SB1132-P | PNP Plastic-Encapsulate Transistors | MCC |
2SB1132-Q | PNP Plastic-Encapsulate Transistors | MCC |
2SB1132-R | PNP Plastic-Encapsulate Transistors | MCC |
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