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PDF 2SB1132 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1132 | |
| Descripción | Medium Power Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Medium Power Transistor
2SB1132
Transistors
Features
Low VCE(sat)
Compliments to 2SD1664
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
(DC)
Single pulse, PW=100ms
Collector Power Dissipation
Jumction temperature
Storage temperature Range
* mounted on a 40x40x0.7mm ceramic board.
Symbol
VCBO
VCEO
VEBO
IC
PC *
Tj
Tstg
Rating
-40
-32
-5
-1
-2
0.5
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
Symbol
Testconditons
ICBO VCB = -20V , IE = 0
IEBO VEB = -4V , IC = 0
V(BR)CBO IC = -50uA , IE = 0
V(BR)CEO IC = -1mA , IB = 0
V(BR)EBO IE = -50uA
hFE VCE = -3V , IC = -0.1A
fT VCE = -5V , IE = 50mA , f = 30MHz
Cob VCB = -10V , IE = 0 , f = 1MHz
Min Typ Max Unit
-0.5 ìA
-0.5 ìA
-40 V
-32 V
-5
82 390
150 MHz
20 30 pF
hFE Classification
Marking
Rank
hFE
P
82 180
BA
Q
120 270
R
180 390
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1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1132.PDF ] | |
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