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Numéro de référence | 2SB1121 | ||
Description | PNP Epitaxial Planar Silicon Transistors | ||
Fabricant | Kexin | ||
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1 Page
SMD Type
Transistors
PNP Epitaxial Planar Silicon Transistors
2SB1121
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
Very small size making it easy to provide highdensity,
small-sized hybrid IC’s.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
-30
-25
-6
-2
-5
500
150
-55 to +150
Unit
V
V
V
A
A
mW
www.kexin.com.cn 1
Free Datasheet http://www.datasheet4u.com
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Pages | Pages 2 | ||
Télécharger | [ 2SB1121 ] |
No | Description détaillée | Fabricant |
2SB1120 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
2SB1120 | PNP Epitaxial Planar Silicon Transistors | Kexin |
2SB1121 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
2SB1121 | PNP Epitaxial Planar Silicon Transistors | Kexin |
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