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PDF 2SB1120 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1120 | |
| Descripción | PNP Epitaxial Planar Silicon Transistors | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
PNP Epitaxial Planar Silicon Transistors
2SB1120
Features
Low collector-to-emitter saturation voltage :
VCE(sat)max=-0.45V.
Large current capacity : IC=-2.5A, ICP=-5A.
Very small size making it easy to provide highdensity,
small-sized hybrid IC’s.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
-20
-10
-7
-2.5
-5
500
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Collector-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Output capacitance
Symbol
Testconditons
ICBO VCB = -16V , IE = 0
IEBO VCB = -4V , IE = 0
VCE = -2V , IC = -500mA
hFE
VCE=-2V IC=-3A
fT VCE = -10V , IC = -50mA
VCE(sat) IC = -1.5A , IB = -0.15A
V(BR)CBO IC = -10ìA , IE = 0
V(BR)CEO IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
Cob VCB = -10V , f = 1MHz
hFE Classification
Marking
Rank
hFE
E
100 200
BC
F
160 320
G
280 560
Min Typ Max Unit
-100 nA
-100 nA
100 560
70
250 MHz
-0.25 -0.45 V
-20 V
-10 V
-7 V
70 pF
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