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PDF 2N3663 Data sheet ( Hoja de datos )
| Número de pieza | 2N3663 | |
| Descripción | NPN RF Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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2N3663
Discrete POWER & Signal
Technologies
E
CB
TO-92
NPN RF Transistor
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 1.0 mA to 30 mA range.
Sourced from Process 43. See PN918 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
12
VCBO
Collector-Base Voltage
30
VEBO
Emitter-Base Voltage
3.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
50
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
2N3663
350
2.8
125
357
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
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