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PDF 2SB1119 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1119 | |
| Descripción | Transistor | |
| Fabricantes | TY Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SB1119 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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Features
Very small size making it easy to provide highdensity,
small-sized hybrid IC’s.
Product specification
2SB1119
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Output capacitance
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
-25
-25
-5
-1
-2
500
150
-55 to +150
Unit
V
V
V
A
A
mW
Symbol
Testconditons
ICBO VCB = -20V , IE = 0
IEBO VCB = -4V , IE = 0
VCE = -2V , IC = -50mA
hFE
VCE = -2V , IC = -1A
fT VCE = -10V , IC = -50mA
VCE(sat) IC = -500mA , IB = -50mA
VBE(sat) IC = -500mA , IB = -50mA
V(BR)CBO IC = -10ìA , IE = 0
V(BR)CEO IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
Cob VCB = -10V , f = 1MHz
hFE Classification
Marking
Rank
hFE
R
100 200
BB
ST
140 280
200 400
U
280 560
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
100 560
40
180 MHz
-0.15 -0.7 V
-0.85 -1.2 V
-25 V
-25 V
-5 V
52 pF
http://www.twtysemi.com
4008-318-123
1 of 1
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SB1119.PDF ] | |
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