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Numéro de référence | 2SB1119 | ||
Description | PNP Silicon Medium Power Transistor | ||
Fabricant | SeCoS | ||
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1 Page
Elektronische Bauelemente
2SB1119/2SD1619
PNP Silicon
Medium Power Transistor
RoHS Compliant Product
SOT-89
D
D1
A
FEATURES
Power dissipation
P CM : 500mW˄Tamb=25ć˅
Collector current
ICM : -1 A
Collector-base voltage
1.BASE
2.COLLECTOR
3.EMITTER
VB(BR)CBO : -25 V
Operating and storage junction temperature range
TJˈTstg: -55ć to +150ć
b1
e
e1
b
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min Max
1.400 1.600
0.320 0.520
0.360 0.560
0.350 0.440
4.400 4.600
1.400 1.800
2.300 2.600
3.940 4.250
1.500TYP
2.900 3.100
0.900 1.100
C
Dimensions In Inches
Min Max
0.055 0.063
0.013 0.020
0.014 0.022
0.014 0.017
0.173 0.181
0.055 0.071
0.091 0.102
0.155 0.167
0.060TYP
0.114 0.122
0.035 0.043
ELECTRICAL CHARACTERISTICS˄Tamb=25ć unlessotherwise specified˅CLASSIFICATION OF hFE(1)
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO Ic=-10A ˈIE=0
-25
V
Collector-emitter breakdown voltage V(BR)CEO IC= -1 mA , IB=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO IE= -10 AˈIC=0
-5
V
Collector cut-off current
ICBO VCB= -20 V , IE=0
-0.1 A
Collector cut-off current
ICEO VCE= -20 V , IB=0
-0.1 A
Emitter cut-off current
IEBO VEB=-4V , IC=0
-0.1 A
DC current gain
hFE˄1˅
hFE˄2˅
VCE= -2V, IC= -50mA
VCE=-2V, IC= -1A
100
40
560
Collector-emitter saturation voltage VCE(sat)
IC=-0.5A, IB= -50mA
-0.7 V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC=-0.5A, IB= -50mA
VCE= -10V, IC=-50mA
-1.2 V
180 MHz
Collector output capacitance
Marking 2SB1119 : BB
2SD1619 : DB
CLASSIFICATION OF hFE(1)
Rank
R
Cob VCB=-10V, f = 1MH
25 pF
S TU
Range
100-200
140-280
200-400
280-560
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 3 | ||
Télécharger | [ 2SB1119 ] |
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