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PDF 2SB806 Data sheet ( Hoja de datos )
| Número de pieza | 2SB806 | |
| Descripción | Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SB806 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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SMD Type
Transistors
PNP Silicon Epitaxial Transistor
2SB806
Features
High collector to emitter voltage: VCEO -120V.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *1
Collector power dissipation
Junction temperature
Storage temperature
*1. PW 10ms,duty cycle 50%
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Output capacitance
Transition frequency
* PW 350ìs,duty cycle 2%
Symbol
VCBO
VCEO
VEBO
IC
IC(pu)
Pc
Tj
Tstg
Rating
-120
-120
-5
-0.7
-1.2
2
150
-55 to +150
Unit
V
V
V
A
A
W
Symbol
Testconditons
ICBO VCB = -120V, IE=0
IEBO VEB = -5V, IC=0
VCE =-1V , IC = -100mA
hFE
VCE =-1V , IC = -5.0mA
VCE(sat) IC = -500mA , IB = -50mA
VBE(sat) IC = -500mA , IB = -50mA
VBE VCE =-10V , IC = -10mA
Cob VCB = -10V , IE = 0 , f = 1.0MHz
fT VCE = -10V , IE = 10mA
Min
90
45
-550
Typ
200
200
-0.4
-0.9
-620
14
75
Max
-100
-100
400
-0.6
-1.5
-650
Unit
nA
nA
V
V
mV
pF
MHz
hFE Classification
Marking
hFE
KR
90 180
KQ
135 270
KP
200 400
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SB806.PDF ] | |
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