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2SB800 fiches techniques PDF

TY Semiconductor - Transistor

Numéro de référence 2SB800
Description Transistor
Fabricant TY Semiconductor 
Logo TY Semiconductor 





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2SB800 fiche technique
Features
World standard miniature package:SOT-89
High collector to emitter voltage:VCEO -80V
Product specification
2SB800
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current(Pulse) *
Total power dissipation
Junction temperature
Storage temperature range
* PW 10ms,duty cycle 50%.
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW 350 ìs, duty cycle
2%
Symbol
VCBO
VCEO
VEBO
IC
IC
PT
Tj
Tstg
Rating
-80
-80
-5
-300
-500
2.0
150
-55 to +150
Unit
V
V
V
mA
mA
W
Symbol
Testconditons
ICBO VCB = -80 V, IE = 0
IEBO VEB = -5.0 V, IC = 0
VCE = -1.0 V, IC = -50 mA
hFE
VCE = -2.0 V, IC = -300 mA
VCE(sat) IC = -300mA, IB = -30mA
VBE(sat) IC = -300mA, IB = -30mA
VBE VCE = -6.0 V, IC = -10 mA
fT VCE = -6.0 V, IE = 10 mA
Cob VCB = -6.0 V, IE = 0 , f = 1.0 MHz
hFE Classification
Marking
hFE
FM
90 180
FL
135 270
FK
200 400
Min Typ Max Unit
-100 nA
-100 nA
90 200 400
30 80
-0.3 -0.6 V
-0.9 -1.2 V
-600 -660 -700 mV
100 MHz
13 pF
http://www.twtysemi.com
4008-318-123
1 of 1
Free Datasheet http://www.datasheet4u.com/

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