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PDF 2SB831 Data sheet ( Hoja de datos )
| Número de pieza | 2SB831 | |
| Descripción | Transistor | |
| Fabricantes | TY Semiconductor | |
| Logotipo |  |
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Product specification
2SB831
Features
Low frequency amplifier.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
-25
-20
-5
-0.7
1
150
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio *
Collector to emitter saturation voltage *
Base to emitter voltage *
* Pulse test.
Symbol
Testconditons
V(BR)CBO IC = -10 ìA, IE = 0
V(BR)CEO IC = -1 mA, RBE =
V(BR)EBO IE = -10 ìA, IC = 0
ICBO VCB = -20 V, IE = 0
hFE VCE = -1 V, IC = -0.15 A
VCE(sat) IC = -0.5 A, IB = -0.05 A
VBE VCE = -1 V, IC = -0.15 A
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-25 V
-20 V
-5 V
-1 mA
85 240
-0.5 V
-1 V
hFE Classification
Marking
hFE
BB
85 170
BC
120 240
http://www.twtysemi.com
4008-318-123
1 of 1
Free Datasheet http://www.datasheet4u.com/
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