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PDF 2SB929 Data sheet ( Hoja de datos )
| Número de pieza | 2SB929 | |
| Descripción | Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
Silicon PNP Epitaxial Planar Type
2SB929
Features
High forward current transfer ratio hFE which has satisfactory linearity.
Low collector-emitter saturation voltage VCE(sat).
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
-60
-60
-5
-3
-5
1.3
150
-55 to +150
Unit
V
V
V
A
A
W
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector cutoff curent
Emitter-base cutoff current
Collector-emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
Testconditons
ICES VCE = -60 V,VBE = 0
ICEO VCE = -30 V,IB = 0
IEBO VEB = -5 V, IC = 0
VCEO IC = -30 mA, IB = 0
VCE = -4 V, IC = -1 A
hFE
VCE = -4 V, IC = -3A
VBE VCE = -4 V,IC = -3 A
VCE(sat) IC = -3 A, IB = -0.375 A
fT VCE = -10 V, IC = -0.5 A , f = 10 MHz
ton
tstg IC = -1 A,IB1 = -0.1 A,IB2 = 0.1 A
tf
Min Typ Max Unit
-200 ìA
-300 ìA
-1 mA
-60 V
70 250
10
-1.8 V
-1.2 V
30 MHz
0.5 ìs
1.2 ìs
0.3 ìs
hFE Classification
Rank
hFE
Q
70 150
P
120 250
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SB929.PDF ] | |
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