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PDF 2SB970 Data sheet ( Hoja de datos )
| Número de pieza | 2SB970 | |
| Descripción | Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
TransistIoCrs
Silicon PNP Epitaxial Planar Type
2SB970
Features
Low collector-emitter saturation voltage VCE(sat).
Mini type package,allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
-15
-10
-7
-.5
-1
200
150
-55 to +150
Unit
V
V
V
A
A
mW
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
* Pulse measurement.
hFE Classification
Marking
Rank
hFE
1R
RS
130 220
180 350
Symbol
Testconditons
VCBO IC = -10 ìA, IE = 0
VCEO IC = -1 mA, IB = 0
VEBO IE = -10 ìA, IC = 0
ICBO VCB = -10 V, IE = 0
hFE VCE = -2 V, IC = -0.5A
VCE(sat) IC = -0.4 A, IB = -8 mA
VBE(sat) IC = -0.4 A, IB = -8 mA
fT VCB = -10 V, IE = 50 mA , f = 200 MHz
Cob VCB = -10V , IE = 0 , f = 1.0MHz
Min Typ Max Unit
-15 V
-10 V
-7 V
-100 nA
130 350
-0.16 -0.3 V
-0.8 -1.2 V
130 MHz
22 pF
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SB970.PDF ] | |
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