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PDF 2SA1580 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1580 | |
| Descripción | Transistor | |
| Fabricantes | TY Semiconductor | |
| Logotipo |  |
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Product specification
2SA1580
Features
High fT.
Small reverse transfer capacitance.
Adoption of FBET process.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Icp
PC
Tj
Tstg
Rating
-70
-60
-4
-50
-100
200
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Base-collector time constant
Output capacitance
Reverse transfer capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
Testconditons
ICBO VCB = -40V, IE=0
IEBO VEB = -3V, IC=0
hFE VCE = -10V , IC = -10mA
fT VCE = -10V , IC = -10mA
rbb,cc VCE = -10V , IC = -10mA
Cob VCB = -10V , f = 1.0MHz
Cre VCB = -10V , f = 1.0MHz
VCE(sat) IC = -20mA , IB = -2mA
VBE(sat) IC = -20mA , IB = -2mA
V(BR)CBO IC = -10ìA , IE = 0
V(BR)CEO IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
hFE Classification
Marking
Rank
hFE
3
60 120
QL
4
90 180
5
135 270
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-0.1 ìA
-1 ìA
60 270
350 700
MHz
8 ps
1.7 pF
1.3 pF
-0.6 V
-1 V
-70 V
-60 V
-4 V
http://www.twtysemi.com
1
4008-318-123
1 of 1
Free Datasheet http://www.datasheet4u.com/
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| PDF Descargar | [ Datasheet 2SA1580.PDF ] | |
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