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PDF 2SA1463 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1463 | |
| Descripción | Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
PNP Silicon Epitaxia
2SA1463
Features
High speed,high voltage switching.
Low Collector Saturation Voltage
TransistIoCrs
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collecto to emitter voltage
Emitter to base voltage
Collector current(DC)
Collector current(Pulse)*
Total power dissipation
Junction temperature
Storage temperature
*.pw 10 ms,Duty Cycle 50%
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
* Pulse test: tp 350 ìs; d 0.02.
hFE Classification
Marking
hFE
1L
60 120
1K
100 200
Symbol
VCBO
VCEO
VEBO
IC
IC
PT
Tj
Tstg
Rating
-60
-45
-5.0
-1.0
-2.0
20
150
-55 to +150
Unit
V
V
V
A
A
W
Symbol
Testconditons
ICES VCE = -45V, RBE=0
IEBO VEB = -4V, IC=0
hFE1 VCE = -10V , IC = -50mA
hFE2 VCE = -10V , IC = -500mA
VCE(sat) IC = -500mA , IB = -50mA
VBE(sat) IC = -500mA , IB = -50mA
fT VCE = -10V , IE = 100mA
Cob VCB = -10V , IE = 0 , f = 1.0MHz
ton
tstg IC = -500mA , IB1 = IB1 = -50mA
toff
Min Typ Max Unit
-0.5 ìA
-0.5 ìA
60 200
60
-0.26 -0.6 V
-0.98 -1.2 V
300 400
MHz
11 25 pF
25 40 ns
46 70 ns
62 100 ns
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| PDF Descargar | [ Datasheet 2SA1463.PDF ] | |
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