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2SA1455K fiches techniques PDF

TY Semiconductor - Transistor

Numéro de référence 2SA1455K
Description Transistor
Fabricant TY Semiconductor 
Logo TY Semiconductor 





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2SA1455K fiche technique
Product specification
2SA1455K
Features
High breakdown voltage:VCEO=-120V
Low noise design:NF=0.2dB(Typ.)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
-120
-120
-5
-50
200
150
-55 to +150
Unit
V
V
V
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
Testconditons
BVCBO IC=-50ìA
BVCEO IC=-1mA
BVEBO IE=-50ìA
ICBO VCB=-100V
IEBO VEB=-4V
hFE VCE=-6V, IC=-2mA
VCE(sat) IC=-10mA, IB=-1mA
fT VCE=-12V, IE= 2mA, f=30MHz
Cob VCB=-12V, IE=0A, f=1MHz
Min Typ Max Unit
-120
V
-120
V
-5 V
-0.5 ìA
-0.5 ìA
180 820
-0.5 V
140 MHz
3.2 pF
hFE Classification
Marking
Rank
hFE
R
180 390
G
S
270 560
E
390 820
http://www.twtysemi.com
4008-318-123
1 of 1
Free Datasheet http://www.datasheet4u.com/

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