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2SA1415 fiches techniques PDF

TY Semiconductor - Transistor

Numéro de référence 2SA1415
Description Transistor
Fabricant TY Semiconductor 
Logo TY Semiconductor 





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2SA1415 fiche technique
SSMMDD TTyyppee
Product specification
2SA1415
Features
Adoption of FBET Process
High Breakdown Voltage (VCEO = 160V)
Excellent Linearlity of hFE and Small Cob
Fast Switching Speed
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Power Dissipation
Jumction temperature
Storage temperature Range
* Mounted on ceramic board (250 mm2 x 0.8 mm)
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PC *
Tj
Tstg
Rating
-180
-160
-5
-140
-200
500
1.3
150
-55 to +150
Unit
V
V
V
mA
mA
mW
W
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Gain-Bandwidth Product
Collector Output Capacitance
Turn-On Time
Storage Time
Fall Time
Symbol
Testconditons
ICBO VCB = -80V , IE = 0
IEBO VEB = -4V , IC = 0
hFE VCE = -5V , IC = -10mA
VCE(sat) IC = -50mA , IB = -5mA
fT VCE = -10V , IC = -10mA
Cob VCB = -10V , IE = 0 , f = 1MHz
ton
tstg See Test Circuit.
tf
Min Typ Max Unit
-100 nA
-100 nA
100 400
-0.14 -0.4 V
150 MHz
4 pF
0.1
1.5 ìs
0.1
http://www.twtysemi.com
4008-318-123
1 of 3
Free Datasheet http://www.datasheet4u.com/

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