W12NK90Z Datasheet PDF - STMicroelectronics
| Part Number | W12NK90Z | |
| Description | STW12NK90Z | |
| Manufacturers | STMicroelectronics | |
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STW12NK90Z
N-channel 900V - 0.72Ω - 11A - TO-247
Zener-protected SuperMESH™ Power MOSFET
General features
Type
STW12NK90Z
VDSS
900V
RDS(on)
<0.88Ω
ID pW
11A 230W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■ Switching application
TO-247
Internal schematic diagram
Order codes
Part number
STW12NK90Z
Marking
W12NK90Z
Package
TO-247
Packaging
Tube
October 2006
Rev 5
1/14
www.st.com
14
Free Datasheet http://www.datasheet4u.com/
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STW12NK90Z
2 Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min.
ID = 1mA, VGS =0
VDS = max rating
VDS = max rating,
TC = 125°C
VGS = ± 20V
VDS = VGS, ID = 100µA
VGS = 10V, ID = 5.5A
900
3
Typ. Max. Unit
V
1 µA
50 µA
±10
3.75 4.5
0.72 0.88
µA
V
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Forward
transconductance
VDS = 15V, ID = 5.5A
11 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
3500
280
58
pF
pF
pF
Coss
(2)
eq
Equivalent output
capacitance
VGS = 0V, VDS = 0V
to 800V
117 pF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 450V, ID = 5A
RG = 4.7Ω VGS = 10V
(see Figure 13)
VDD = 720V, ID = 10A,
VGS = 10V, RG = 4.7Ω
(see Figure 14)
31 ns
20 ns
88 ns
55 ns
113 152 nC
19 nC
60 nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
5/14
Free Datasheet http://www.datasheet4u.com/
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| Information | Total 14 Pages | |
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