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PDF 2SC3663 Data sheet ( Hoja de datos )

Número de pieza 2SC3663
Descripción Transistor
Fabricantes Kexin　
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No Preview Available ! 2SC3663 Hoja de datos, Descripción, Manual

SMD Type
TransistIoCrs
NPN Epitaxial Silicon Transistor
2SC3663
Features
Low-voltage, low-current, low-noise and high-gain
NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz
GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz
Ideal for battery drive of pagers, compact radio equipment cordless phones, etc.
Gold electrode gives high reliability.
Mini mold package, ideal for hybrid ICs.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Rating
15
8
2
5
50
150
-65 to +150
Unit
V
V
V
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Maximum Available Gain
Noise Figure
Associated Power Gain
Collector Capacitance
Symbol
Testconditons
ICBO VCB = 5 V, IE = 0
IEBO VEB = 1 V, IC = 0
hFE VCE = 1 V, IC = 250 PA, pulse
fT VCE = 1 V, IC = 1 mA
|S21e|2 VCE = 1 V, IC = 1 mA, f = 1 GHz
MAG VCE = 1 V, IC = 1 mA, f = 1 GHz
NF VCE = 1 V, IC = 250 ìA, f = 1.0 GHz
GA VCE = 1 V, IC = 250 ìA, f = 1.0 GHz
C VCB = 1 V, IE = 0, f = 1.0 MHz
Min Typ Max Unit
0.1 ìA
0.1 ìA
50 100 250
4 GHz
4.0 6.5
dB
12.5 dB
3.0 4.5 dB
3.5 dB
0.4 0.6 pF
Marking
Marking
R62
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