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2SC3657 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistors

Numéro de référence 2SC3657
Description Silicon NPN Power Transistors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC3657 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3657
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min)
·Fast Switching Speed
APPLICATIONS
·Switching regulator and high voltage switching applications
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900 V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
4A
ICM Collector Current-Peak
8A
IBB Base Current-Continuous
2A
IBM Base Current-Peak
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
5A
80 W
150
-55~150
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/

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