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PDF 2SC3647 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3647 | |
| Descripción | Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
High-Voltage Switching Applications
2SC3647
Features
Adoption of FBET, MBIT Processes
High Breakdown Voltage and Large Current Capacity
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Power Dissipation
Jumction temperature
Storage temperature Range
* Mounted on ceramic board (250 mm2 x 0.8 mm)
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PC *
Tj
Tstg
Rating
120
100
6
2
3
500
1.5
150
-55 to +150
Unit
V
V
V
A
A
mW
W
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Gain-Bandwidth Product
Collector Output Capacitance
Turn-On Time
Storage Time
Fall Time
Symbol
Testconditons
ICBO VCB = 100V , IE = 0
IEBO VEB = 4V , IC = 0
V(BR)CBO IC = 10uA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10uA , IC = 0
hFE VCE = 5V , IC = 100mA
VCE(sat) IC = 1A , IB = 100mA
VBE(sat) IC = 1A , IB = 100mA
fT VCE = 10V , IC = 100mA
Cob VCB = 10V , IE = 0 , f = 1MHz
ton
tstg See Test Circuit.
tf
Min Typ Max Unit
100 nA
100 nA
120 V
100 V
6V
100 400
0.22 0.6 V
0.85 1.2 V
120 MHz
25 pF
80
750 ns
40
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC3647.PDF ] | |
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