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2SC3637 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistors

Numéro de référence 2SC3637
Description Silicon NPN Power Transistors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC3637 fiche technique
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3637
DESCRIPTION
With TO-3PN package
High voltage ,high speed
High reliability
APPLICATIONS
Ultrahigh-definition CRT display horizontal
deflection output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-peak
PC
Collector power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
900
500
7
10
20
90
150
-55~150
UNIT
V
V
V
A
A
W
Free Datasheet http://www.datasheet4u.com/

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