|
|
Numéro de référence | 2SA1362 | ||
Description | Transistors | ||
Fabricant | TY Semiconductor | ||
Logo | |||
1 Page
Product specification
2SA1362
Features
High DC Current Gain
Low Saturation Voltage
Suitable for Driver Stage of Small Motor
Small package.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
-15
-15
-5
-800
-160
200
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
hFE Classification
Marking
Rank
hFE
AE
YG
120-240
200 400
Symbol
Testconditons
ICBO VCB = -15 V, IE = 0
IEBO VEB = -5 V, IC = 0
V(BR)CEO IC = -10 mA, IB = 0
hFE VCE = -1 V, IC = -100 mA
VCE(sat) IC = -400 mA, IB = -8 mA
VBE VCE = -1 V, IC = -10 mA
fT VCE = -5 V, IC = -10 mA
Cob VCB = -10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
-100 nA
-100 nA
-15 V
120 400
-0.2 V
-0.5 -0.8 V
120 MHz
13 pF
http://www.twtysemi.com
1
4008-318-123
1 of 1
Free Datasheet http://www.datasheet4u.com/
|
|||
Pages | Pages 1 | ||
Télécharger | [ 2SA1362 ] |
No | Description détaillée | Fabricant |
2SA1360 | TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) | Toshiba Semiconductor |
2SA1360 | SILICON POWER TRANSISTOR | SavantIC |
2SA1360 | POWER TRANSISTOR | Inchange Semiconductor |
2SA1360 | Trans GP BJT PNP 150V 0.05A 3-Pin TO-126IS | New Jersey Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |