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Numéro de référence | 2SA1301 | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1301
DESCRIPTION
·High Power Dissipation
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min)
·Complement to Type 2SC3280
APPLICATIONS
·Power amplifier applications
·Recommend for 80W high fidelity audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-12 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-1.2 A
120 W
150 ℃
-55~150 ℃
isc Website:www.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 2 | ||
Télécharger | [ 2SA1301 ] |
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