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2SA1301 fiches techniques PDF

Inchange Semiconductor - Silicon PNP Power Transistor

Numéro de référence 2SA1301
Description Silicon PNP Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SA1301 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1301
DESCRIPTION
·High Power Dissipation
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min)
·Complement to Type 2SC3280
APPLICATIONS
·Power amplifier applications
·Recommend for 80W high fidelity audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-12 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-1.2 A
120 W
150
-55~150
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/

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