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PDF 2SA1300 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1300 | |
| Descripción | PNP EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Dc Components | |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SA1300
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use Strobe flash and medium power
amplifier applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
IC
IB
PD
TJ
TSTG
Rating
-20
-20
-10
-6
-2
-5
-2
750
+150
-55 to +150
Unit
V
V
V
V
A
A
A
mW
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Emitter Breakdown Volatge
BVCEO -10
-
Emitter-Base Breakdown Voltage
BVEBO
-6
-
Collector Cutoff Current
ICBO
-
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
IEBO
VCE(sat)
-
-
-
-0.3
Base-Emitter Voltage
VBE - -0.83
DC Current Gain(1)
hFE1
hFE2
140
60
-
-
Transition Frequency
fT - 140
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
50
Max
-
-
-100
-100
-0.5
-1.5
1000
-
-
-
Classification of hFE1
Rank
Y
GR
Range
140~280
200~400
BL
300~600
PE
500~1000
Unit
V
V
nA
nA
V
V
-
-
MHz
pF
Test Conditions
IC=-10mA, IB=0
IE=-1mA, IC=0
VCE=-20V, IE=0
VBE=-6V, IC=0
IC=-2A, IB=-50mA
IC=-2A, VCE=-1V
IC=-0.5A, VCE=-1V
IC=-2A, VCE=-1V
IC=-0.5A, VCE=-1V
VCE=-10V, f=1KHz, IE=0
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