DataSheetWiki


2SA1300 fiches techniques PDF

TRANSYS - Plastic-Encapsulated Transistors

Numéro de référence 2SA1300
Description Plastic-Encapsulated Transistors
Fabricant TRANSYS 
Logo TRANSYS 





1 Page

No Preview Available !





2SA1300 fiche technique
Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SA1300 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM : 0.75 W (Tamb=25)
Collector current
ICM : -2
A
Collector-base voltage
V(BR)CBO : -20
V
Operating and storage junction temperature range
TJ : 150
Tstg: -55to +150
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
CLASSIFICATION OF hFE
Rank
Range
Y
140-280
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Test conditions
Ic=-1mA , IE=0
IC=-10mA , IB=0
IE=-1mA, IC=0
VCB=-20 V , IE=0
VEB=-6 V , IC=0
VCE=-1V, IC=-0.5A
IC=-2A, IB= -100mA
IC= -2A, VCE=-1V
VCE=-1V, IC= -0.5A
f = 30MHz
MIN MAX UNIT
-20 V
-10 V
-6 V
-0.1 µA
-0.1 µA
140 600
-0.5 V
-1.5 V
100 MHz
GR
200-400
BL
300-600
Free Datasheet http://www.datasheet4u.com/

PagesPages 1
Télécharger [ 2SA1300 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SA1300 TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS) Toshiba Semiconductor
Toshiba Semiconductor
2SA1300 PNP EPITAXIAL SILICON TRANSISTOR Unisonic Technologies
Unisonic Technologies
2SA1300 Plastic-Encapsulated Transistors TRANSYS
TRANSYS
2SA1300 PNP EPITAXIAL PLANAR TRANSISTOR Dc Components
Dc Components

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche