|
|
PDF IRF7907PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7907PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF7907PBF (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
PD - 97066A
IRF7907PbF
Applications
l Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
HEXFET® Power MOSFET
VDSS
RDS(on) max
:30V Q1 16.4m @VGS = 10V
:Q2 11.8m @VGS = 10V
ID
9.1A
11A
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l Improved Body Diode Reverse Recovery
l 100% Tested for RG
l Lead-Free
SO-8
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Q1 Max.
Q2 Max.
30
± 20
9.1 11
7.3 8.8
76 85
2.0 2.0
1.3 1.3
0.016
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Q1 Max.
42
62.5
Q2 Max.
42
62.5
Units
°C/W
www.irf.com
1
Free Datasheet0h7tt/p0:/9/w/0w8w.datasheet4u.com/
1 page  
Q1 - Control FET
1.5
ID = 9.1A
VGS = 10V
Typical Characteristics
IRF7907PbF
Q2 - Synchronous FET
1.5
ID = 11A
VGS = 10V
1.0 1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig 13. Normalized On-Resistance vs. Temperature
100.0
10.0 TJ = 150°C
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig 14. Normalized On-Resistance vs. Temperature
100.0
TJ = 150°C
10.0
1.0
TJ = 25°C
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode Forward Voltage
40
ID = 8.8A
30
TJ = 125°C
20
TJ = 25°C
10
2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
Fig 17. Typical On-Resistance vs.Gate Voltage
www.irf.com
1.0
TJ = 25°C
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 16. Typical Source-Drain Diode Forward Voltage
40
ID = 11A
30
20
TJ = 125°C
10
TJ = 25°C
0
2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
Fig 18. Typical On-Resistance vs.Gate Voltage
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF7907PBF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF7907PBF | Power MOSFET ( Transistor ) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |