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PDF IRF7501PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7501PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95345A
IRF7501PbF
l Generation V Technology
l Ulrtra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
l Lead-Free
HEXFET® Power MOSFET
S1 1
G1 2
8 D1
7 D1
VDSS =20V
S2 3
6 D2
G2 4
5 D2 RDS(on) = 0.135Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is
at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.
Micro8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGSM
VGS
dv/dt
TJ , TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage Single Pulse tp<10μs
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
Max.
20
2.4
1.9
19
1.25
0.8
0.01
16
± 12
5.0
-55 to + 150
240 (1.6mm from case)
Max.
100
Units
V
A
W
W
W/°C
V
V
V/ns
°C
Units
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
www.irf.com
1
02/13/12
Free Datasheet http://www.datasheet4u.com/
1 page  
IRF7501PbF
500
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
400 Coss = Cds + C gd
Ciss
300 Coss
200
Crss
100
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Vs.
Drain-to-Source Voltage
10 I D = 1.7A
VDS = 16V
8
6
4
2
FOR TEST CIRCUIT
0
SEE FIGURE 9
A
0 2 4 6 8 10
QG , Total Gate Charge (nC)
Fig 9. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
D = 0.50
0.20
10 0.10
0.05
0.02
0.01
1
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF7501PBF.PDF ] | |
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