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Numéro de référence | IRF7314QPBF | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
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1 Page
PD - 96107A
Benefits
• Advanced Process Technology
• ÿDual P-Channel MOSFET
• ÿUltra Low On-Resistance
• ÿ175°C Operating Temperature
• ÿRepetitive Avalanche Allowed up to Tjmax
• ÿLead-Free
Description
These HEXFET ® Power MOSFET’s in a Dual SO-8
package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area.
Additional features of these HEXFET Power MOSFET’s
are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an
extremely efficient and reliable device for use in a
wide variety of applications.
IRF7314QPbF
HEXFET® Power MOSFET
VDSS
-20V
RDS(on) max
0.058@VGS = -4.5V
0.098@VGS = -2.7V
ID
-5.2A
-4.42A
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
SO-8
The 175°C rating for the SO-8 package provides
improved thermal performance with increased safe
operating area and dual MOSFET die capability make
it ideal in a variety of power applications. This dual,
surface mount SO-8 can dramatically reduce board
space and is also available in Tape & Reel.
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
EAS
IAR
EAR
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction and Storage Temperature Range
Max.
-20
-5.2
-4.3
-43
2.4
1.7
16
± 12
610
-5.2
See Fig.14, 15, 16
-55 to + 175
Units
V
A
W
W
mW/°C
V
mJ
A
mJ
°C
Thermal Resistance
Parameter
Max.
RθJA
Maximum Junction-to-Ambient
www.irf.com
Units
62.5
°C/W
1
08/02/10
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 9 | ||
Télécharger | [ IRF7314QPBF ] |
No | Description détaillée | Fabricant |
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