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IRF7314Q fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF7314Q
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF7314Q fiche technique
PD -93945A
IRF7314Q
HEXFET® Power MOSFET
Typical Applications
Anti-lock Braking Systems (ABS)
Electronic Fuel Injection
Air bag
VDSS
-20V
RDS(on) max
0.058@VGS = -4.5V
0.098@VGS = -2.7V
ID
-5.2A
-4.42A
Benefits
Advanced Process Technology
Dual P-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
S1
G1
S2
G2
1
2
3
4
8 D1
7 D1
6 D2
5 D2
Description
To p V iew
SO-8
Specifically designed for Automotive applications, these HEXFET ® Power MOSFETs in a Dual SO-8 package utilize the
lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFETs are a 175°C junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other applications.
The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual
MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
EAS
IAR
EAR
TJ , TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain CurrentQ
Maximum Power DissipationS
Maximum Power DissipationS
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche Energy
Junction and Storage Temperature Range
Thermal Resistance
Parameter
Max.
RθJA
Maximum Junction-to-Ambient S
www.irf.com
Max.
-20
-5.2
-4.3
-43
2.4
1.7
16
± 12
610
-5.2
See Fig.14, 15, 16
-55 to + 175
Units
62.5
Units
V
A
W
W
mW/°C
V
mJ
A
mJ
°C
°C/W
1
03/20/02
Free Datasheet http://www.datasheet4u.com/

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