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2N3501L fiches techniques PDF

Semicoa Semiconductor - Type 2N3501L Geometry 5620 Polarity NPN

Numéro de référence 2N3501L
Description Type 2N3501L Geometry 5620 Polarity NPN
Fabricant Semicoa Semiconductor 
Logo Semicoa Semiconductor 





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2N3501L fiche technique
Type 2N3501L
Geometry 5620
Polarity NPN
Qual Level: JAN - JANS
Features:
General-purpose silicon transistor
for switching and amplifier appli-
cations.
Housed in TO-5 case.
Also available in chip form using
the 5620 chip geometry.
The Min and Max limits shown are
per MIL-PRF-19500/366 which
Semicoa meets in all cases.
Data Sheet No. 2N3501L
Generic Part Number:
2N3500L
REF: MIL-PRF-19500/366
TO-5
Rating
Maximum Ratings
TC = 25oC unless otherwise specified
Symbol
Rating
Collector-Emitter voltage
VCEO
150
Collector-Base Voltage
VCBO
150
Emitter-Base voltage
VEBO
6.0
Collector Current, Continuous
Power Dissipation, TA = 25oC
Derate above 25oC
IC 300
5.0
PD
28.8
Operating Junction Temperature
TJ -65 to +200
Storage Temperature
TSTG
-65 to +200
Unit
V
V
V
mA
mW
mW/oC
oC
oC

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