|
|
Numéro de référence | 2SB1116 | ||
Description | PNP General Purpose Transistor | ||
Fabricant | Weitron | ||
Logo | |||
1 Page
PNP General Purpose Transistor
P b Lead(Pb)-Free
COLLECTOR
2
3
BASE
1
EMITTER
2SB1116/2SB1116A
1
2
3
TO-92
Maximum Ratings ( TA=25℃C unless otherwise noted)
Rating
Collector-Base Voltage
Symbol
VCBO
1116
-60
1116A
-80
Collector-Emitter Voltage
VCEO
-50
-60
Emitter-Base Voltage
VEBO
-6.0
-6.0
Collector Current Continuous
lC
1000
THERMAL CHARACTERISTICS
Charact er ist ics
Total Device Dissipation
Alumina Substrate,TA=25°C
Junction Temperature
Storage Temperature
Symbol
PD
TJ
Tstg
Max
750
+150
-55 to +150
Unit
V
V
V
mA
Unit
mW
°C
°C
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
(lC=-100μA, lE=0)
Collector-Emitter Breakdown Voltage
(lC=-1mA, lB=0)
Emitter-Base Breakdown Voltage
(lE=-100μA, lC=0)
Symbol Min Max
Unit
1116
1116A
1116
1116A
1116
1116A
V(BR)CBO
V(BR)CEO
V(BR)EBO
-60
-80
-50
-60
-6.0
V
V
V
WEITRON
http://www.weitron.com.tw
1/4
22-Jan-09
Free Datasheet http://www.datasheet4u.com/
|
|||
Pages | Pages 4 | ||
Télécharger | [ 2SB1116 ] |
No | Description détaillée | Fabricant |
2SB1110 | (2SB1109 / 2SB1110) SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) | Hitachi Semiconductor |
2SB1114 | PNP SILICON EPITAXIAL TRANSISTOR | NEC |
2SB1114 | Transistor | Kexin |
2SB1115 | PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD | NEC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |