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2SB1116 fiches techniques PDF

Weitron - PNP General Purpose Transistor

Numéro de référence 2SB1116
Description PNP General Purpose Transistor
Fabricant Weitron 
Logo Weitron 





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2SB1116 fiche technique
PNP General Purpose Transistor
P b Lead(Pb)-Free
COLLECTOR
2
3
BASE
1
EMITTER
2SB1116/2SB1116A
1
2
3
TO-92
Maximum Ratings ( TA=25C unless otherwise noted)
Rating
Collector-Base Voltage
Symbol
VCBO
1116
-60
1116A
-80
Collector-Emitter Voltage
VCEO
-50
-60
Emitter-Base Voltage
VEBO
-6.0
-6.0
Collector Current Continuous
lC
1000
THERMAL CHARACTERISTICS
Charact er ist ics
Total Device Dissipation
Alumina Substrate,TA=25°C
Junction Temperature
Storage Temperature
Symbol
PD
TJ
Tstg
Max
750
+150
-55 to +150
Unit
V
V
V
mA
Unit
mW
°C
°C
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
(lC=-100μA, lE=0)
Collector-Emitter Breakdown Voltage
(lC=-1mA, lB=0)
Emitter-Base Breakdown Voltage
(lE=-100μA, lC=0)
Symbol Min Max
Unit
1116
1116A
1116
1116A
1116
1116A
V(BR)CBO
V(BR)CEO
V(BR)EBO
-60
-80
-50
-60
-6.0
V
V
V
WEITRON
http://www.weitron.com.tw
1/4
22-Jan-09
Free Datasheet http://www.datasheet4u.com/

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